mmbd4448ht series plastic-encapsulated switching diode elektronische bauelemente 21-jul-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ? ?? ? ? ?? ? top view a l c b d g h j f k e 1 2 3 1 2 3 ? ?? ? ref. millimeter ref. millimeter min. max. min. max. a 1.5 1.7 g - 0.1 b 1.45 1.75 h 0.55 ref. c 0.75 0.85 j 0.1 0.2 d 0.7 0.9 k - e 0.9 1.1 l 0.5 typ. f 0.15 0.25 m 0.25 0.325 rohs compliant product a suffix of -c specifies halogen & lead-free features fast switching speed for general purpose switching applications high conductance marking package information package mpq leader size sot-523 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameters symbol rating unit non-repetitive peak reverse voltage v r m 100 v peak repetitive reverse voltage v rrm 80 v working peak reverse voltage v rwm 80 v dc blocking voltage v r 80 v rms reverse voltage v r(rms) 57 v forward continuous current i fm 500 ma average rectified output current i o 250 ma non-repetitive peak forward surge current t=1.0 s i fsm 4.0 a t=1.0s 1.5 power dissipation p d 150 mw thermal resistance, junction to ambient r ja 833 c / w storage temperature t stg -65~150 c electrical characteristics (t a = 25c unless otherwise specified) parameters symbol min. max. unit test conditions reverse breakdown voltage v r 80 - v i r =2.5a forward voltage v f1 0.62 0.72 v i f =5ma v f2 - 0.855 v i f =10ma v f3 - 1 v i f =100ma v f4 - 1.25 v i f =150ma maximum dc reverse current at rated dc blocking voltage i r1 - 0.1 a v r =70v i r2 25 na v r =20v capacitance between terminals c t 3.5 pf v r =6v, f=1mhz maximum reverse recovery time t rr - 4 ns v r =6v, i f =5ma product mmbd4448ht MMBD4448HTA mmbd4448htc mmbd4448hts marking a3 a6 a7 ab circuit sot - 5 23
mmbd4448ht series plastic-encapsulated switching diode elektronische bauelemente 21-jul-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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